Publications

  1. Improved Mesoscale Grain Boundary Energy Models for Silicon Carbide from Atomistic-Informed Regression

    Hauck, A. S., Guziewski, M., & Hernández—Rivera, E. (2026, June). US Army Research Laboratory, Aberdeen Proving Ground, MD, Technical Report ARL-TR-10377.

  2. Nonradiative carrier capture by point defects in irradiated GaN

    Hauck, A. S., Jin, M., & Tuttle, B. R. (2026, June). Journal of Applied Physics, 139(24), 245702. https://doi.org/10.1063/5.0325688

  3. Examining composition-dependent radiation response in AlGaN alloys

    Jin, M., Reza, F., Hauck, A., Mahfuz, M., Wang, X., Chu, R., & Tuttle, B. (2025, May). Acta Materialia, 289, 120891. https://doi.org/10.1016/j.actamat.2025.120891

  4. Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation

    Hauck, A. S., Jin, M., & Tuttle, B. R. (2024, April). Applied Physics Letters, 124(15), 152107. https://doi.org/10.1063/5.0190371